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Scattering and Noise Parameters
Table 4. Electrical Characteristics Measured in Frequency-Specific Tuned Circuits (continued)
(Vcc = 2.7V, T A = 25°C unless otherwise noted)
Characteristic
Output 3rd Order Intercept Point
Power Output at 1 dB Gain Compression
Input Return Loss
Small Signal Gain
Reverse Isolation
Output Return Loss
Symbol
OIP3
P1 dBoutput
S11
S21
S12
S22
Min
11
2
—
23
—
—
Typ
12.4
3.5
-10
24
-40
-23
Max
—
—
-9
—
-39
-16
Unit
dBm
dBm
dB
dB
dB
dB
1900 MHz (see Figure 19 )
Supply Current
RF Gain
Noise Figure
Output 3rd Order Intercept Point
Power Output at 1 dB Gain Compression
Input Return Loss
Small Signal Gain
Reverse Isolation
Output Return Loss
Icc
G
NF
OIP3
P1 dBoutput
S11
S21
S12
S22
—
13.5
—
7
-2.5
—
13.8
—
—
4.7
14.9
1.8
8.5
-1.1
-13
14.8
-42.5
-11.8
5.6
—
2.15
—
—
-10
—
-41.5
-10
mA
dB
dB
dBm
dBm
dB
dB
dB
dB
3
Scattering and Noise Parameters
Table 5 through Table 8 lists the S parameters for the packaged part in a 50 Ω system at four supply voltage
levels.
Table 5. Scattering Parameters
(Vcc = 2.7V, 25 ° C, 50 Ω system)
S11
S21
S12
S22
f (MHz)
Mag
Ang
Mag
Ang
Mag
Ang
Mag
Ang
100
150
200
250
300
350
400
450
0.864
0.859
0.843
0.831
0.812
0.794
0.775
0.754
-8.1
-12.4
-16.2
-20.6
-24.5
-28.3
-32.1
-35.7
12.178
12.428
12.112
12.128
11.95
11.741
11.556
11.353
169.9
165.1
160.5
156.1
151.8
147.9
143.8
140
0.001
0.001
0.001
0.002
0.002
0.002
0.002
0.003
24.4
36.2
39.4
52.1
52.6
59.2
64.2
66
0.953
0.952
0.951
0.952
0.951
0.95
0.947
0.947
-1.1
-1.5
-2.2
-2.8
-3.3
-4
-4.6
-5.4
MBC13917 Advance Information, Rev. 1.0
6
Freescale Semiconductor
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